Search results for "X-ray lithography"

showing 6 items of 6 documents

Intregrating metallic wiring with three-dimensional polystyrene colloidal crystals using electron-beam lithography and three-dimensional laser lithog…

2017

We demonstrate a method to fabricate narrow, down to a few micron wide metallic leads on top of a three-dimensional colloidal crystal self-assembled from polystyrene (PS) nanospheres of diameter 260 nm, using electron-beam lithography. This fabrication is not straightforward due to the fact that PS nanospheres cannot usually survive the harsh chemical treatments required in the development and lift-off steps of electron-beam lithography. We solve this problem by increasing the chemical resistance of the PS nanospheres using an additional electron-beam irradiation step, which allows the spheres to retain their shape and their self-assembled structure, even after baking to a temperature of 16…

Materials scienceAcoustics and UltrasonicsNanotechnology02 engineering and technology010402 general chemistry01 natural sciencesphononic crystalthree-dimensional lithographyLithographyPhotonic crystalelectron-beam lithographyself-assemblyColloidal crystal021001 nanoscience & nanotechnologyCondensed Matter Physics0104 chemical sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsResistX-ray lithographycolloidal crystal0210 nano-technologyElectron-beam lithographyNext-generation lithographyMaskless lithographyphotonic crystalcross-linking
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Resolution performance of programmable proximity aperture MeV ion beam lithography system

2007

AbstractAn ion beam lithography system for light and heavy ions has been developed at the University of Jyväskylä's Accelerator Laboratory. The system employs a programmable proximity aperture to define the beam. The proximity aperture is made up of four Ta blades with precise straight edges that cut the beam in the horizontal and vertical directions. The blade positions and dimensions are controlled by a pair of high-precision linear-motion positioners. The sample is mounted on a X-Y-Z stage capable of moving with 100 nm precision steps under computer control. The resolution performance of the system is primarily governed by the proximity aperture. Pattern edge sharpness is set by the beam…

Materials scienceIon beamAperturebusiness.industryAnalytical chemistryIon beam lithographyOpticsPhysics::Accelerator PhysicsRay tracing (graphics)X-ray lithographybusinessNext-generation lithographyBeam (structure)Beam divergence
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Programmable proximity aperture lithography with MeV ion beams

2008

A novel MeV ion beam programmable proximity aperture lithography system has been constructed at the Accelerator Laboratory of the University of Jyvaskyla, Finland. This facility can be used to fabricate three dimensional microstructures in thick (<100μm) polymer resist such as polymethylmethacrylate. In this method, MeV ion beams from the 1.7 MV pelletron and K130 cyclotron accelerators are collimated to a beam spot of rectangular shape. This shape is defined by a computer-controlled aperture made of a pair of L-shaped Ta blades which are in close proximity to the sample to minimize the penumbra broadening. Here the authors report on development of the system, the controlling software, the …

Materials scienceIon beambusiness.industryCondensed Matter PhysicsIon beam lithographyFocused ion beamPelletronOpticsPhysics::Accelerator PhysicsStencil lithographyX-ray lithographyElectrical and Electronic EngineeringbusinessNext-generation lithographyMaskless lithographyJournal of Vacuum Science &amp; Technology B: Microelectronics and Nanometer Structures
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&lt;title&gt;Amorphous chalcogenide semiconductor resists for holography and electron-beam lithography&lt;/title&gt;

2001

The photo- and electron beam induced changes in solubility of amorphous chalcogenide semiconductor As-S-Se and As2S3 thin films have been studied. The possibilities of practical application of these materials as resists for the production of relief holograms and holographic optical elements are discussed. It is shown that the self-enhancement phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light or thermal treatment can be used to increase the diffraction efficiency of the holograms.© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Materials sciencebusiness.industryChalcogenideHolographylaw.inventionInterference lithographyAmorphous solidchemistry.chemical_compoundSemiconductorOpticschemistryResistlawX-ray lithographybusinessElectron-beam lithographyOptical Organic and Inorganic Materials
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A new approach for actinic defect inspection of EUVL multilayer mask blanks: Standing wave photoemission electron microscopy

2006

Extreme ultraviolet lithography (EUVL) at 13.5 nm is the next generation lithography technique capable of printing sub-50 nm structures. With decreasing feature sizes to be printed, the requirements for the lithography mask also become more stringent in terms of defect sizes and densities that are still acceptable and the development of lithography optics has to go along with the development of new mask defect inspection techniques that are fast and offer high resolution (preferable in the range of the minimum feature size) at the same time. We report on the development and experimental results of a new 'at wavelength' full-field imaging technique for defect inspection of multilayer mask bl…

Materials sciencephotoemission electronbusiness.industryExtreme ultraviolet lithographyCondensed Matter Physicsmultilayer mask blankAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialslaw.inventionPhotoemission electron microscopyWavelengthOpticslawEUV lithographymicroscopyOptoelectronicsX-ray lithographyElectrical and Electronic EngineeringPhotolithographyactinic defect inspectionbusinessLithographyImage resolutionNext-generation lithographyMicroelectronic Engineering
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UV optical record and electron beam lithography in polymer films

2012

Possibility of UV optical record and electron beam lithography in different type of organic polymer films was studied. Mechanisms of molecular structure changes: photoisomerization, destruction, cross-linking and oxidation have been discussed. The results of UV illumination of polyurethanes, polyacrilates, and some block-copolymers are described. The element analysis of polyisoprene block copolymer was performed before and after UV illumination, and the changes in transmission spectra of the polymer film were measured. The resolution of electron beam lithography on polymer films was studied. In the polyisoprene block copolymer film the oxidation polymerization was ascertain at UV-illuminati…

chemistry.chemical_classificationMaterials sciencePhotoisomerizationbusiness.industryResolution (electron density)PolymerOpticsPolymerizationchemistryCopolymerOptoelectronicsMoleculeX-ray lithographybusinessElectron-beam lithographyIOP Conference Series: Materials Science and Engineering
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